orderin g numbe r : en8362c monolithic digital ic for variable speed fan motor single-phase full-wave pre-driver LB11967V overview the LB11967V is a single-phase bipolar variable speed fan motor pre-driver that works with an external pwm signal. a highly efficient, quiet and low power consumption motor driver circuit, with a large variable speed, can be implemented by adding a small number of external components. this device is optimal for driving large scale fan motors (with large air volume and large current) such as those used in servers and consumer products. functions ? pre-driver for single-phase full-wave drive ? pnp-emos is used as an external power transistor, en abling high-efficiency low-consumption drive by means of the low-saturation output and single-phase full- wave drive. (pmos-nmos also applicable) ? external pwm input enabling variable speed control ? separately-excited upper direct pwm (f = 25khz) control method, enabling highly silent speed control ? compatible with 12v, 24v, and 48v power supplies ? current limiter circuit incorporated ? chopper type current limit at start ? reactive current cut circuit incorporated ? reactive current before phase change is cut to enable silent and low-consumption drive. ? minimum speed setting pin ? minimum speed can be set with extern al resistor. the start assistance circu it enables start at extremely low speed. ? constant-voltage output pin for hall bias ? lock protection and automatic reset functions incorporated ? (rotation speed detection), rd (lock detection) output specifications of any and all sanyo semiconductor co.,l td. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' sproductsor equipment. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, av equipment, communication device, office equipment, industrial equ ipment etc.). the products mentioned herein shall not be intended for use for any "special application" (medica l equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, t ransportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of re liability and can directly threaten human lives in case of failure or malfunction of the product or may cause har m to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for app lications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. if there is n o consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 61610 sy/91708 ms / 72308 ms 20080703-s00002 / 92706 / 81005 sy pc no.8362-1/9
LB11967V no.8362-2/9 specifications maximum ratings at ta = 25 c parameter symbol conditions ratings unit v cc maximum supply voltage v cc max 18 v out pin maximum output current i out max 50 ma out pin output withstand voltage v out max 18 v hb maximum output current i hb max 10 ma vth input pin withstand voltage v vth max 8 v rd/fg output pin output withstand voltage v rd /v fg max 18 v rd/fg output current i rd /i fg max 10 ma allowable power dissipation pd max mounted on a specified board* 800 mw operating temperature range topr -30 to +95 c storage temperature range tstg -55 to +150 c *specified board: 114.3mm 76.1mm 1.6mm, glass epoxy board. recommended operating conditions at ta = 25 c parameter symbol conditions ratings unit v cc supply voltage v cc 6 to 16 v vth input level voltage range vth full speed mode 0 to 7 v hall input common phase input voltage range vicm 0.2 to 3 v electrical characteristics at ta = 25 c, v cc = 12v, unless otherwise specified. ratings parameter symbol conditions min typ max unit i cc 1 during drive 6 10 14 ma circuit current i cc 2 during lock protection 6 10 14 ma 6vreg voltage 6vreg i 6vreg = 5ma 5.80 6.0 6.15 v hb voltage v hb i hb = 5ma 1.05 1.22 1.35 v vover voltage v vover i vover = 1ma 12.0 12.8 13.6 v cpwm-h level voltage v crh 4.35 4.55 4.75 v cpwm-l level voltage v crl 1.45 1.65 1.85 v cpwm oscillation frequency fpwm c = 100pf 18 25 32 khz ct pin h level voltage v cth 3.4 3.6 3.8 v ct pin l level voltage v ctl 1.4 1.6 1.8 v ict pin charge current i ct 1 v ct = 1.2v 1.6 2.0 2.5 a ict pin discharge current i ct 2 v ct = 4.0v 0.16 0.20 0.28 a ict charge/discharge current ratio rct i ct 1/i ct 2 8 10 12 deg out-n output voltage v on i o = 20ma 4 10 v out-p sink current i op 15 20 ma hall input sensitivity vhn zero peak value (including offset and hysteresis) 10 20 mv rd/fg output pin l voltage v rd /v fg i rd /i fg = 5ma 0.15 0.3 v rd/fg output pin leak current i rdl /i fgl v rd /v fg = 16v 30 a
LB11967V package dimensions unit : mm (typ) 3179c no.8362-3/9 6.5 4.4 6.4 0.22 0.65 (0.33) 11 0 11 20 0.5 0.15 1.5max 0.1 (1.3) sanyo : ssop20(225mil) pca00204 pd max -- ta 352 0 1000 200 400 800 600 --30 --10 30 10 50 70 90 110 ambient temprature, ta -- c allowable power dissipation, pd max -- mw mounted on specified board: 114.3 76.11.6mm 3 glass epoxy board pin assignment 1out2p 2out2n 3v cc 4vlim 5sense 6rmi 7vth 8cpwm 9fg 10rd 20 19 18 17 16 15 14 13 out1p out1n vover sgnd 6vreg roff ct in + 12 11 hb in - top view LB11967V truth table during full-speed rotation in - in + ct out1p out1n out2p out2n fg rd mode h l l l off h l out1 2 drive l h l off h l l off l out2 1 drive h l off l off h l l h h off h off l off off lock protection vth cpwm in - in + out1p out1n out2p out2n mode h l l l off h out1 2 drive l h l h off h l l out2 1 drive h l off l off h h l l h off h off l during rotation regeneration in lower tr
LB11967V block diagram discharge circuit 6vreg hall-bias hall 0.47 to 1f ct v cc 6vreg roff hb in + in - controller oscillation discharge pulse fg rd out1n out1p out2n out2p sgnd rmi vth cpwm vlim sense hysteresis amp no.8362-4/9
LB11967V sample application circuit 1 (12v) vz=18v sop8901 rf v cc vover hb in - in + h rmi 6vreg pwm-in vth rout=100 rb=10k cpwm ct cp=100pf 25khz ct=0.47f sgnd out2n out2p out1n out1p roff 6vreg cb=~0.022f r=0~5k vlim sense fg rd rfg,rrd=10k~100k no.8362-5/9
LB11967V sample application circuit 2 (24v, 48v) rf v cc vover hb in - in + h rmi 6vreg pwm-in vth cpwm ct cp=100pf sgnd out2n out2p out1n out1p roff 6vreg vlim sense fg rd no.8362-6/9
LB11967V no.8362-7/9 *1. sgnd is connected to the control circuit power supply system. *2. for the cm capacitor that is a power stabilization capacitor for pwm drive and for absorption of kick-back, the capacitance uses 0.1 f or more. in this ic, the lower transistor performs current regeneration by means of switching of upper transistor. connect cm between v cc and gnd with the thick pattern and along the shortest route. *3. be sure to use the zener diode if kick-back causes excessi ve increase of the supply vo ltage because such increase damages ic. *4. wiring need to be short to prevent carrying of the noise. if the noise is carried, insert a capacitor between in+ and in-. the hall input circuit is a comparat or having a hysteresis of 20mv. it is recommended that the hall input level is more than three times (60mvp-p) this hysteresis. *5. with cp = 100pf, oscillation occurs at f = 25 khz and provides the basic frequency of pwm. *6. this is the open collector output, which outputs ?l? during rotation and ?h? at stop. this output is left open when not used. *7. this is the open collector output, which can detect the rotation speed using the fg output according to the phase shift. this output is left open when not used. *8. this is a hall element bias pin, that is, the constant-voltage output pin. *9. this is the minimum speed setting pin, which is pulled up with 6vreg when not used. when ic power may possibly be turned off first when the pin is used, be sure to insert a current limiting resistor to prevent inflow of the large current. (the same applies to the vth pin.) *10. this pin sets the soft switching time to cut the reactive current before phase change and is connected to 6vreg when not used. *11. this pin activates the current limiter when the sense pin voltage is higher than the vlim pin voltage and is connected to 6vre g when not used. *12. this is connected to gnd when not used. *13. this is a pin for constant-voltage bias and should be used for application of 24v and 48v. (refer to the sample application circuit.) be sure to use the current limiting resistor. this is left open when not used.
LB11967V control timing chart 4.55v 1.65v f=25khz (cp=100pf) 0v 0v 12v v cc cpwm fg vth voltage rmi voltage on-duty-small pmw-in disconnected full speed high speed low speed pwm control variable speed rotation set to minimum speed (stop mode) on-duty-large (1) minimum speed setting (stop) mode pwm-in input is filtered to generate the vth voltage. at low speed, the fan rotates with the minimum speed set with rmi pin during low speed. if the minimum speed is not set (rmi = 6vreg), the fan stops. (2) low ? high speed mode pwm control is made through comparison of oscilla tion and vth voltages with cpwm changing between 1.6v ? 4.6v. when the vth voltage is lower, the ic switches to drive mode. when the vth voltage is higher, the p-channel fet is turned off and coil current is regenerated through the low-side fet. therefore, as the vth voltage lowers, the output on-duty increases, increasing the co il current and raising the motor speed. the rotation speed is fed back by the fg output. (3) full speed mode the full-speed mode becomes effective w ith the vth voltage of 1.65v or less. (vth must be equal to gnd when the speed control is not to be made.) (4) pwm-in input disconnection mode when the pwm-in input pin is disconnected, vth becomes 1.65v or les and the output enables full drive at 100%. the fan runs at full speed. (refer to the sample application circuit.) no.8362-8/9
LB11967V LB11967V sanyo semiconductor co.,ltd. assumes no responsib ility for equipment failures that result from using products at values that exceed, even momentarily, rate d values (such as maximum ra tings, operating condition ranges, or other parameters) listed in products specif ications of any and all sanyo semiconductor co.,ltd. products described or contained herein. sanyo semiconductor co.,ltd. strives to supply high-qual ity high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to acci dents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause dam age to other property. when designing equipment, adopt safety measures so that these kinds of accidents or e vents cannot occur. such measures include but are not limited to protective circuits and error prevention c ircuits for safe design, redundant design, and structural design. upon using the technical information or products descri bed herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable f or any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. information (including circuit diagr ams and circuit parameters) herein is for example only; it is not guaranteed for volume production. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equi pment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. in the event that any or all sanyo semiconductor c o.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities conc erned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any in formation storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. ps no.8362-9/9 sanyo semiconductor co.,ltd. assumes no responsib ility for equipment failures that result from using products at values that exceed, even momentarily, rate d values (such as maximum ra tings, operating condition ranges, or other parameters) listed in products specif ications of any and all sanyo semiconductor co.,ltd. products described or contained herein. sanyo semiconductor co.,ltd. strives to supply high-qual ity high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to acci dents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause dam age to other property. when designing equipment, adopt safety measures so that these kinds of accidents or e vents cannot occur. such measures include but are not limited to protective circuits and error prevention c ircuits for safe design, redundant design, and structural design. upon using the technical information or products descri bed herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable f or any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. information (including circuit diagr ams and circuit parameters) herein is for example only; it is not guaranteed for volume production. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equi pment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. in the event that any or all sanyo semiconductor c o.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities conc erned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any in formation storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. this catalog provides information as of june, 2010. specifications and information herein are subject to change without notice. ps no.8362-9/9
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